0405SC-2200M rev a1 microsemi rfis inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. preliminary specification general description the 0405SC-2200M is a common gate n-channel depletion mode class ab silicon carbide (sic) static induction transistor (sit) capable of providing 2200 watts of rf peak power from 406 to 450 mhz. the transistor is designed for use in high power amplifiers supporting applications such as uhf weather radar and long range tracking radar. the device is an addition to the series of high power silicon carbide transistors from microsemi rf is. case outline 55tw-fet (common gate) absolute maximum ratings voltage and current drain-source (v dss ) 250v gate-source (v gs ) -1v temperatures storage temperature -65 to +150 c operating junction temperature +250 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units i dss drain-source leakage current v gs = -20v, v dg = 125v 750 a i gss gate-source leakage current v gs = -20v, v ds = 0v 50 a jc 1 thermal resistance 0.15 oc/w functional characteristics @ 25 c, vdd = 125v, i dq(ave) = 120 ma, freq = 406, 425, 450 mhz, g pg common gate power gain p out = 2200 w, pulsed 7.0 7.5 db p in input power pulse width = 300us, df = 6% 390 440 w d drain efficiency f = 450 mhz, p out =2200w 50 55 % load mismatch f = 420 mhz, p out = 2200w 10:1 po +1db power output ? higher drive f = 450 mhz, pin = 490 w 2450 w vgs gate source voltage set for idq(ave) = 120ma 3.0 10.0 volts rev a1 may 2010 0405SC-2200M 2200watts, 125 volts, class ab 406 to 450 mhz silicon carbide sit
0405SC-2200M rev a1 microsemi rfis inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. typical rf performance curve 0405SC-2200M: pin vs pout / gain 450mhz, 300us 6%, 125v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 0 50 100 150 200 250 300 350 400 pin (w) pout (w) 2 3 4 5 6 7 8 9 gain (db) pout gain 0405SC-2200M: pout vs drain eff 450mhz, 300us 6%, 125v 0% 10% 20% 30% 40% 50% 60% 70% 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 pout (w) drain eff (%) drain eff 0405SC-2200M
0405SC-2200M rev a1 microsemi rfis inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. test circuit board 0405SC-2200M test circuit component designations and values part description part description c1, c8, c9, c20 330pf chip capacitor (atc 100b) l2, l3 7 turns, 18awg, idia 0.2? c2 3.9pf chip capacitor (atc 100b) l1, l4 ferrite coil inductor c3 12pf chip capacitor (atc 100b) c4 6.8pf chip capacitor (atc 100b) z1 65 x 890 mils (w x l) c5 2.2pf chip capacitor (atc 100b) z2 65 x 720 mils (w x l) c6, c7 33pf chip capacitor (atc 100b) z3 865 x 450 mils (w x l) c10 1000uf 160v electrolytic capacitor z4 1125 x 500 mils (w x l) c11 1uf chip capacitor z5 1200 x 500 mils (w x l) c12, c13, c14 24pf chip capacitor (atc 100b) z6 290 x 105 mils (w x l) c15 15pf chip capacitor (atc 100b) z7 290 x 835 mils (w x l) c16, c17 22pf chip capacitor (atc 100b) z8 65 x 687 mils (w x l) c18 10pf chip capacitor (atc 100b) z9 65 x 420mils (w x l) c19 8.2pf chip capacitor (atc 100b) pcb rogers 4350, r =3.48, 30mils, 1oz note: all z length dimensions include bends 0405SC-2200M
0405SC-2200M rev a1 microsemi rfis inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. impedance information 0405SC-2200M z s z l typical impedance values frequency (mhz) z s ( ? ) z l ( ? ) 406 0.86 ? j1.97 0.75 ? j0.49 425 0.93 ? j1.76 0.87 ? j0.25 450 1.05 ? j1.51 1.11 + j0.04 * v dd = 125v, i dq = 120ma avg, p out = 2200w * pulse format: 300s, 6% long term duty factor . input matching network output matching network
0405SC-2200M rev a1 microsemi rfis inc. reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. case outline 55tw fet 0405SC-2200M
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